1 - Semiconductor
1.1 - What is a Semiconductor?quality
semiconductor materials to produce all kinds of semiconductors such as
diodes, transistors, IC we have seen in electronic devices
today.
semiconductor materials to produce all kinds of semiconductors such as
diodes, transistors, IC we have seen in electronic devices
today.
Semiconductors are substances with characteristics intermediate between
conductors and insulators, in terms of the semiconductor chemical
substances that have 4 electrons in the outermost layer of atoms. That is the nature
Germanium (Ge) and Silicium (Si)
conductors and insulators, in terms of the semiconductor chemical
substances that have 4 electrons in the outermost layer of atoms. That is the nature
Germanium (Ge) and Silicium (Si)
From the initial semiconductor (pure) one must
create two types of semiconductor semiconductor semiconductor type N and type P, then
transplant the semiconductor pieces of N and P obtained the diode or transistor.
create two types of semiconductor semiconductor semiconductor type N and type P, then
transplant the semiconductor pieces of N and P obtained the diode or transistor.
Si and Ge have valence 4, which is the outermost layer has four
electron in the atom to pure Si (Ge) linked together by
covalent links as shown below.
electron in the atom to pure Si (Ge) linked together by
covalent links as shown below.
Pure semiconductor.
1.2 - Semiconductor type N
* When we mix a small amount of chemotherapy with 5 as phosphorus (P) on the nature
of semiconductor silicon, a P atom linked to four Si atoms in contact
plus the chemotherapy, only four phosphorus atoms involved electronic affiliate
and the remaining one electron and become free electrons => Semiconductors at
e becomes redundant (electrically negative) and are called semiconductors N (
Negative: negative).
of semiconductor silicon, a P atom linked to four Si atoms in contact
plus the chemotherapy, only four phosphorus atoms involved electronic affiliate
and the remaining one electron and become free electrons => Semiconductors at
e becomes redundant (electrically negative) and are called semiconductors N (
Negative: negative).
Semiconductors N
1 .3 - P type semiconductor
In contrast, when we added a small amount of a third chemotherapy as Indium
(In) on Si is a semiconductor material Indium atom will link
to four Si atoms linked by covalent links and missing a
power E => into holes (positively charged) and are
called semiconductors P.
(In) on Si is a semiconductor material Indium atom will link
to four Si atoms linked by covalent links and missing a
power E => into holes (positively charged) and are
called semiconductors P.
Semiconductor P
2 - Diode (diode) Semiconductors
2.1 - Adjoining P - N and Structures of the semiconductor diode.When
there are two semiconductors are P and N, if the coupling of two semiconductors in
a t
: At the surface of contact, excess electrons in semiconductors N diffusion
into the semiconductor region P to fill the hole => to form a layer of ions
electrically neutral => Ion layer constitutes the electrical domain between
two semiconductors.
there are two semiconductors are P and N, if the coupling of two semiconductors in
a t
: At the surface of contact, excess electrons in semiconductors N diffusion
into the semiconductor region P to fill the hole => to form a layer of ions
electrically neutral => Ion layer constitutes the electrical domain between
two semiconductors.
Termites exposed to P - N => Structure of diode.
* The image above is the contact connection P - N and also the structure of a semiconductor diode.
Symbol and shape of the semiconductor diode.
2.2 - Polarity upon the diode.When
we positive voltage (+) to anode (semiconductor region P) and negative voltage (-)
in Katot (semiconductor region N), then the interaction effect of power
voltage, insulation narrow domain, the voltage difference between keeping the poles to reach
0.6 V (with Si diode type) or 0.2 V (with diode type Ge) is the
domain area decreased by no insulation => Diode arrested top conductor. If the
voltage continues to increase the flow through the diode increases rapidly but the main
difference between the two extreme voltage of the diode does not increase (remain at 0.6 V)
we positive voltage (+) to anode (semiconductor region P) and negative voltage (-)
in Katot (semiconductor region N), then the interaction effect of power
voltage, insulation narrow domain, the voltage difference between keeping the poles to reach
0.6 V (with Si diode type) or 0.2 V (with diode type Ge) is the
domain area decreased by no insulation => Diode arrested top conductor. If the
voltage continues to increase the flow through the diode increases rapidly but the main
difference between the two extreme voltage of the diode does not increase (remain at 0.6 V)
Diode (Si) polarization upon - When Dode lead
agreement, the reduce voltage at 0.6 V
agreement, the reduce voltage at 0.6 V
Line voltage characteristic of the diode upon
* Conclusion : When Diode (type Si)
are polarized upon, if upon bias voltage <0.6 V is not a
line passing through the diode, if the polarization voltage = 0.6 V, the agreement reached with the line passing through
the diode after the current through the diode voltage drop upon increasing but remains
at 0.6 V value.
are polarized upon, if upon bias voltage <0.6 V is not a
line passing through the diode, if the polarization voltage = 0.6 V, the agreement reached with the line passing through
the diode after the current through the diode voltage drop upon increasing but remains
at 0.6 V value.
2.3 - Diode for reverse polarity.
When the opposite polarity to the diode which is powered (+) in Katot (selling
guide N), power (-) to anode (semiconductor P), the interaction of the voltage
contrast, the wider domain insulation and prevent prevent electric current through
adjacent relationship, the diode can withstand large reverse voltage
of about 1000V, the new diode is punctured.
guide N), power (-) to anode (semiconductor P), the interaction of the voltage
contrast, the wider domain insulation and prevent prevent electric current through
adjacent relationship, the diode can withstand large reverse voltage
of about 1000V, the new diode is punctured.
Diode only fires when the voltage of opposite polarity increase> = 1000V
2.4 - Measurements of Diode test
Measuring Diode test
- Set the clock in the scale x 1Ω, put two sticks on either end measuring diode, if:
- Upon measuring the anode rod black, red que Katot => kim up, turning to needles which are => good Diode
- If measured on both clockwise = 0Ω => a diode has been short.
- If the needle is not measured positively up => is broken diode.
- In measurements on the diode D1 is good, Diode D2 and D3 has been short-cuts
- If that measure 1KΩ to scale back on needles diode is still a little diode detectors.
2.5 - The application of semiconductor diode.
* Due to one-dimensional conductor diode
is often used in the rectifier AC a
way, the detector circuit, the circuit to reduce the polarization voltage transistor operation
activities. the rectifier diode can be integrated into the diode bridge
form.
is often used in the rectifier AC a
way, the detector circuit, the circuit to reduce the polarization voltage transistor operation
activities. the rectifier diode can be integrated into the diode bridge
form.
Diode bridge the AC rectifier.
3 - Assorted Diode
3.1 - Zener Diode
* Structure:
Diode Zener diode has a structure similar but usually have two layers of semiconductor P
- N paired, Zener diode is used in the mode polarization
contrast, when polarized upon zener diode as diode often, but when distributed
inverse zener diode will reduce the voltage to a fixed rate equal to the value
recorded on the diode.
* Structure:
Diode Zener diode has a structure similar but usually have two layers of semiconductor P
- N paired, Zener diode is used in the mode polarization
contrast, when polarized upon zener diode as diode often, but when distributed
inverse zener diode will reduce the voltage to a fixed rate equal to the value
recorded on the diode.
Shape Zener Diode (DZ)
Symbols and applications of zener diode in the circuit.
- The above diagram illustrates the application of DZ, U1 power source voltage changes, voltage stabilizer diode DZ is, R1 is to limit the line.
- We see that the source U1> DZ DZ shall always fixed on whether the source U1 changes.
- When the source changes, the counter current U1 through changes DZ, DZ efflux through a limiting value of about 30mA.
- Usually people use resources U1> 1.5 => 2
times more fitting term DZ and R1 lines so that the most backward through DZ
<30mA.
If U1 <DZ when pressure on the DZ U1 changes also change
if U1> U1 changes when dz => constant pressure on the DZ.
if U1> U1 changes when dz => constant pressure on the DZ.
3.2 - Optical Diode Thu. (Photo Diode)Diode
Optical receiver operation mode reverse polarity, diode casing for a piece of
glass to light in connection P - N, the diode reverse current
proportional to the intensity of light falling on the diode.
Optical receiver operation mode reverse polarity, diode casing for a piece of
glass to light in connection P - N, the diode reverse current
proportional to the intensity of light falling on the diode.
The symbol of the Photo Diode
Illustrating the operation of the Photo Diode
3.3 - emitting diode (Diode Emiting Light: LED)diode
developed planar diode emits polarized light when convenient, the voltage
of the LED work about 1.7 => 2.2 V LED currents between 5mA to
20mA
developed planar diode emits polarized light when convenient, the voltage
of the LED work about 1.7 => 2.2 V LED currents between 5mA to
20mA
LEDs used to light source, flash design, the power status. etc. ...
LED light-emitting diode
3.4 - Diode varicap (variable capacity diode)Diode content is variable capacitance diode as a capacitor, and capacitance changes when we change the voltage on the diode reverse order.
Content of the variable un varicap diode (V D )
in the resonant circuit
in the resonant circuit
- In the philosophy on when we adjust voltage VR, the voltage
varicap diode placed backwards changes the capacitance of the diode to change
=> change the resonance frequency of the circuit. - Variable capacity diode used in the channel color TV, in the circuit resonant frequency adjusted by voltage.
3.5 - Diode pulsein
the pulse power at the output of the pulse transformer, we must use the Diode
pulse to the rectifier. pulse diode diode is working at high frequencies of a few
tens of KHz, normal rectifier diode can not be replaced in position
around the diode, whereas pulse diode can substitute for position
often diode, diode pulse value the diode is often many times higher.
the pulse power at the output of the pulse transformer, we must use the Diode
pulse to the rectifier. pulse diode diode is working at high frequencies of a few
tens of KHz, normal rectifier diode can not be replaced in position
around the diode, whereas pulse diode can substitute for position
often diode, diode pulse value the diode is often many times higher.
Characteristics, then diode pulse shape does differ from the diode
normally, but usually the next pulse diode marked dashed or
marked by two rounds
normally, but usually the next pulse diode marked dashed or
marked by two rounds
The symbol of the diode pulse
3.6 - Diode detector.
Diode is a type of glass and small notebooks called diode contacts because
the contact between two semiconductors P - N in a power point to avoid
parasitic capacity, diode detector used in high frequency circuits used
to separate signal wave.
the contact between two semiconductors P - N in a power point to avoid
parasitic capacity, diode detector used in high frequency circuits used
to separate signal wave.
3.7 - Diode rectifier.
As the diode rectifier used to face in the rectifier AC 50Hz
, this diode is usually three types 1A, 2A and 5A.
, this diode is usually three types 1A, 2A and 5A.
Diode rectifier 5A
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